中圖分類號(hào)：TN454 文獻(xiàn)標(biāo)志碼：A DOI: 10.16157/j.issn.0258-7998.256307 中文引用格式： 徐舒，豆興昆，方志明，等. X波段60 W高功率高效率功率放大器設(shè)計(jì)[J]. 電子技術(shù)應(yīng)用，2025，51(8)：93-97. 英文引用格式： Xu Shu，Dou Xingkun，F(xiàn)ang Zhiming，et al. Design of X-band 60 W high power and high efficiency power amplifier[J]. Application of Electronic Technique，2025，51(8)：93-97.
Design of X-band 60 W high power and high efficiency power amplifier
58th Research Institute of China Electronics Technology Group Corporation
Abstract： An 8~12 GHz 60 W high power amplifier is proposed in this paper based on the 0.25 μm GaN HEMT. The output power synthesis network adds parallel LC to the ground branchesbased on the Bus-bar synthesis network to optimize the balance of each pipe core, which makes the overall structure of the chip is compact and easy to match. The input second harmonic impedance matching technology is adopted to improve the high frequency band without affecting the output power. The output stage matching structure adopts two-stage series inductance and capacitance matching, which matches the output stage impedance to the target impedance and achieves low matching loss. Under the test conditions of 100 μs pulse width and 10% duty cycle, the saturation output power of the amplifier is greater than 48 dBm in the 8~12 GHz frequency band, the efficiency is greater than 35%, the power gain is 23 dB, and the chip size is 3.97 mm×5 mm.
Key words : power amplifier；GaN；high power；input second harmonic match；multiplex synthesis
