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高性能RISC-V處理器抗輻照加固設(shè)計(jì)
電子技術(shù)應(yīng)用
黃強(qiáng),廖述京,賴文彬,歐艷鳳
廣東省新一代通信與網(wǎng)絡(luò)創(chuàng)新研究院
摘要: 隨著太空技術(shù)的蓬勃發(fā)展,芯片在輻照環(huán)境下的可靠性問題日益凸顯?;赗ISC-V指令集架構(gòu)的高性能處理器C501,采用三模冗余方法和糾錯(cuò)檢錯(cuò)技術(shù)分別對(duì)電路層和系統(tǒng)層進(jìn)行抗輻照加固,同時(shí)采取訪存請(qǐng)求強(qiáng)制不命中的策略來糾正校驗(yàn)錯(cuò)誤的數(shù)據(jù)塊,提高緩存系統(tǒng)的糾錯(cuò)能力。仿真實(shí)驗(yàn)結(jié)果表明,加固后的處理器可以通過糾正電路修復(fù)輻照引起的緩存數(shù)據(jù)錯(cuò)誤,同時(shí)其最高工作頻率降低8.8%,面積增加約為64.9%,性能基本保持不變。
中圖分類號(hào):TP332;TN406 文獻(xiàn)標(biāo)志碼:A DOI: 10.16157/j.issn.0258-7998.246194
中文引用格式: 黃強(qiáng),廖述京,賴文彬,等. 高性能RISC-V處理器抗輻照加固設(shè)計(jì)[J]. 電子技術(shù)應(yīng)用,2025,51(8):108-113.
英文引用格式: Huang Qiang,Liao Shujing,Lai Wenbin,et al. Design of radiation hardened based on the high performance RISC-V processor[J]. Application of Electronic Technique,2025,51(8):108-113.
Design of radiation hardened based on the high performance RISC-V processor
Huang Qiang,Liao Shujing,Lai Wenbin,Ou Yanfeng
Guangdong New Generation Communication and Network Research Institute
Abstract: With the rapid development of space technology, the reliability of chips in the irradiation environment becomes more and more prominent. In this paper, based on the RISC-V architecture high-performance processor C501, the triple modular redundancy and error detection and correction are used to harden the circuit level and system level respectively. At the same time, the strategy of memory access request forcing miss is adopted to correct the data block of check error, so as to improve the error-correcting ability of the cache system. The simulation outcomes indicate that the radiation harden processor is capable of rectifying cache data errors caused by irradiation. At the same time, the maximum working frequency has witnessed a decrement of 8.8%, the area increased by 64.9%, while the performance level has been maintained.
Key words : RISC-V;design of radiation hardened;triple modular redundancy;error detection and correction

引言

航天技術(shù)的發(fā)展關(guān)系到國家的安全,而空間環(huán)境的復(fù)雜性和多樣性影響并制約著空間技術(shù)的發(fā)展,高空中存在的高能粒子輻射會(huì)對(duì)工作的航天器、人造衛(wèi)星等造成不同程度的威脅[1]。高能粒子輻射在芯片上會(huì)產(chǎn)生單粒子瞬態(tài)效應(yīng)(Single Event Transient, SET)和單粒子翻轉(zhuǎn)效應(yīng)(Single Event Upset, SEU)[2],使存儲(chǔ)器件存入錯(cuò)誤數(shù)據(jù),從而引發(fā)軟錯(cuò)誤[3-4],破壞數(shù)據(jù)的正確性,甚至?xí)?dǎo)致程序的誤操作,若不及時(shí)糾正將會(huì)影響計(jì)算機(jī)系統(tǒng)的正常運(yùn)行。時(shí)序邏輯觸發(fā)器、鎖存器電路以及SRAM中的Cell存儲(chǔ)陣列電路占到輻射失效總比例的89%[5],對(duì)于這些類型的錯(cuò)誤通常采用三模冗余法(Triple Modular Redundancy, TMR)[6-7]或者糾錯(cuò)檢錯(cuò)技術(shù)(Error Detection And Correction, EDAC)[8-9]進(jìn)行加固處理。

RISC-V是一種開源精簡指令集架構(gòu),因其在能效、容錯(cuò)能力和計(jì)算靈活性的優(yōu)勢,使其成為航空航天應(yīng)用的理想選擇,可作為下一代高性能航天技術(shù)處理器的CPU核心[10]。因此,設(shè)計(jì)出具有抗輻照特性的高性能RISC-V微結(jié)構(gòu)的可行性方案,值得深入探討。

本文基于RISC-V指令集結(jié)構(gòu),設(shè)計(jì)了一款具有抗輻照、高性能和高可靠性的C501處理器微架構(gòu)。該處理器分別從電路設(shè)計(jì)層和系統(tǒng)結(jié)構(gòu)層進(jìn)行抗輻照加固設(shè)計(jì)。電路設(shè)計(jì)層主要采用TMR容錯(cuò)技術(shù)對(duì)觸發(fā)器、鎖存器等時(shí)序電路結(jié)構(gòu)進(jìn)行加固[5],使之具備抵抗單粒子效應(yīng)的能力,是整個(gè)抗輻照加固設(shè)計(jì)的核心。系統(tǒng)結(jié)構(gòu)層,首先將EDAC技術(shù)融入了多級(jí)緩存系統(tǒng),實(shí)現(xiàn)各級(jí)緩存之間的檢錯(cuò)糾錯(cuò)[11]。其次,對(duì)于Tag或者Data校驗(yàn)出錯(cuò)的訪存請(qǐng)求,通過向下級(jí)緩存取回?cái)?shù)據(jù)塊的方式來糾正校驗(yàn)錯(cuò)誤的非臟數(shù)據(jù)塊。對(duì)于臟數(shù)據(jù)塊的校驗(yàn)錯(cuò)誤,則引發(fā)中斷,交由軟件處理。


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http://theprogrammingfactory.com/resource/share/2000006638


作者信息:

黃強(qiáng),廖述京,賴文彬,歐艷鳳

(廣東省新一代通信與網(wǎng)絡(luò)創(chuàng)新研究院,廣東 廣州 510700)


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