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基于體硅MEMS工藝的射頻微系統(tǒng)沖擊特性仿真研究*
電子技術(shù)應(yīng)用
馮政森1,王輅1,曾燕萍1,楊兵1,祁冬2,王志輝2,張睿2
1.中國電子科技集團公司第五十八研究所,江蘇 無錫214035;2.中國電子科技集團公司第十研究所,四川 成都610036
摘要: 高過載沖擊試驗成本高、周期長,同時失效檢測手段較少,難以定位結(jié)構(gòu)薄弱點。針對體硅工藝MEMS(Micro-electromechanical System)射頻微系統(tǒng),采用沖擊響應(yīng)譜與瞬態(tài)動力學(xué)方法,研究板級與試驗條件下的高沖擊載荷響應(yīng)。仿真結(jié)果表明,該射頻微系統(tǒng)能夠承受高沖擊過載,仿真結(jié)果可提前預(yù)判結(jié)構(gòu)失效點,提高產(chǎn)品抗沖擊可靠性。
中圖分類號:TN403;TP212 文獻標志碼:A DOI: 10.16157/j.issn.0258-7998.234326
中文引用格式: 馮政森,王輅,曾燕萍,等. 基于體硅MEMS工藝的射頻微系統(tǒng)沖擊特性仿真研究[J]. 電子技術(shù)應(yīng)用,2024,50(2):65-70.
英文引用格式: Feng Zhengsen,Wang Lu,Zeng Yanping,et al. Simulation study on impact characteristics of RF microsystem based on bulk silicon MEMS process[J]. Application of Electronic Technique,2024,50(2):65-70.
Simulation study on impact characteristics of RF microsystem based on bulk silicon MEMS process
Feng Zhengsen1,Wang Lu1,Zeng Yanping1,Yang Bing1,Qi Dong2,Wang Zhihui2,Zhang Rui2
1.The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China; 2.The 10th Research Institute of China Electronics Technology Group Corporation, Chengdu 610036, China
Abstract: The high overload impact test is costly and time consuming, and the failure detection means are few, so it is difficult to locate the weak points of the structure. In this paper the impact response spectrum and transient dynamics method are used to study the impact load response of a RF microsystem based on bulk silicon micro-electromechanical system(MEMS) at plate level and under experimental conditions. The simulation results show that the RF microsystem can bear a high impact load,which can predict the structural failure point so as to improve the impact reliability of product.
Key words : bulk silicon MEMS;RF microsystem;impact;response spectrum;transient dynamics;reliability

引言

航空航天設(shè)備的發(fā)展趨勢是小型化、輕量化,同時需要高可靠性以適應(yīng)強沖擊與高過載環(huán)境,射頻微系統(tǒng)相較于傳統(tǒng)的射頻類板卡產(chǎn)品,集成度高、質(zhì)量輕、慣性小,非常適用于各類高速飛行體。在高速飛行系統(tǒng)中應(yīng)用微系統(tǒng)技術(shù), 能夠有效縮小系統(tǒng)的體積、減輕系統(tǒng)的重量、提高系統(tǒng)的性能和可靠性[1]。


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作者信息:

馮政森1,王輅1,曾燕萍1,楊兵1,祁冬2,王志輝2,張睿2

1.中國電子科技集團公司第五十八研究所,江蘇 無錫214035;2.中國電子科技集團公司第十研究所,四川 成都610036


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